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    Memory

    1γ DRAM technology

    Micron 1γ (1-gamma) DRAM technology continues to lead the advancements to memory technology. 1γ technology sees generation-over-generation improvements characterized with advanced design optimization, power efficiencies, and performance scaling that demonstrates Micron’s ongoing dedication to innovation and excellence.

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    Gen-over-gen technology leadership

    1γ (1-gamma) DRAM technology builds on the excellence of 1α (1-alpha) and 1β (1-beta) nodes, improving bit density per wafer by more than 30% over 1β.1 Design enhancements drive increased speed capabilities while simultaneously lowering power requirements. Extreme ultraviolet (EUV) lithography process improvements have pioneered a method that yields finer features on silicon in a shorter amount of time.

    Green and gold lights reflecting off of a wafer

    Engineering excellence

    Micron 1γ DRAM technology unlocks the potential of DDR5 and ramps the potential for speeds up to 9200MT/s – 15% faster than relative 1β products. More Speed = More Power? Not for 1γ. Engineering excellence means 1γ DDR5 is capable of faster speeds while also reducing power – up to 20%.2

    Engineer working in the lab and looking at a wafer on a monitor

    Empowering tomorrow's innovation

    Micron 1γ drives the next generation of memory innovation that tomorrow’s problems require. As data-centric workloads like AI increase across data centers, mobile devices, automotive applications, and even personal computers, Micron 1γ is poised to empower users with improved power savings, increased capacity and industry-leading performance.

    An engineer working in a data center

    Improvement in memory density per wafer when compared to previous 1β DRAM technology

    greater than 30%

    Reduction in power compared to 1β DDR5  

    greater than 20%

    Speed improvements compared to 1β DDR5 

    greater than 15%

    Leads with innovations in next-gen memory solutions

    Micron is leading gen-over-gen technology transitions with process and design innovations to enable future memory solutions. With 1γ, Micron continues to lead memory technology advancement to meet the industry’s need for higher performance, lower power and increased supply. Learn more from the infographic.

    View the infographic View the explainer
    infographic of the differences between the 1y (1-gamma) process node versus previous process nodes

    Pioneering memory technology advancements for future compute needs

    Micron today announced it is the first in the industry to sample its 1γ (1-gamma) DRAM node in DDR5 memory to select data center customers, client customers and ecosystem enablers.

    Read press release
    Wafer reflecting green and gold lighting

    Behind 1γ: A new DRAM process node from Micron

    Micron 1γ technology node is a new manufacturing process that uses cutting-edge extreme ultraviolet (EUV) lithography and Micron next-gen high-K metal gate (HKMG) CMOS technology to deliver significant gains across bit density, power efficiency and performance. Read the technical brief to learn more about the advanced technologies behind 1γ that improve DRAM technology and optimize fab production, positioning Micron to efficiently drive next-gen memory innovation for AI across data center, mobile, automotive and client segments.

    Read tech brief
    wafer close-up with green and gold light reflecting off of the surface

    Emerging technologies & strategic growth: theCUBE interview with Sumit Sadana

    Join us for an insightful interview with Sumit Sadana, EVP and Chief Business Officer at Micron, hosted by Savannah Peterson and Dave Vellante from theCUBE at MWC25 Barcelona. Learn more about Micron's latest 1-gamma DRAM technology and EUV advancements and explore the future of high-bandwidth memory and AI-driven growth.

    Watch the interview
    Sumit Sadana doing an interview for theCube
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    Featured resources

    1. Calculated based on overall bits per wafer comparing 1β to 1γ process node.
    2. Calculated based on power used in watts by 1γ based DDR5 compared to 1β DDR5.

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