Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled smartphones.
- Next-generation 1β low-power DRAM — improved performance and new power savings features1 allow advanced smartphone users to perform more tasks without sacrificing battery life.
- 232-layer NAND storage capacity reaches up to 1 terabit per die, with a 28% smaller package than previous-generations2 empowering mobile content creators to capture and share stunning photos and videos.
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1 Compared to the previous 1α generation of Micron mobile DRAM
2 28% smaller compared to Micron 176-layer NAND parts or equal storage capacity