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HBM2E memory

HBM2E is one of Micron’s high-bandwidth memories, designed for applications that demand maximum throughput between memory and processing. This performance is achieved by integrating TSV stacked memory die with logic in the same chip package. Micron’s extensive history in advanced memory packaging and stacking has made for a seamless entrance into this market. Micron is committed to providing high-bandwidth solutions, including HBM2E, HBM3E and future high-performance memory technologies.

Density

Select Density
  • 8GB
  • 16GB
Range: 8GB - 16GB
  • Bus Width
    x1024
  • Voltage
    1.2V
  • Op. Temp.
    0C to +95C
  • Bus Width
    x1024
  • Voltage
    1.2V
  • Op. Temp.
    0C to +95C
+